IPD50R380CEAUMA1 Power MOSFET, N Channel, 500 V, 14.1 A, 0.35 TO252 IPD50R380CE

The Infineon IPD50R380CE is a high-performance N-channel power MOSFET designed using the revolutionary CoolMOS technology. This device is specifically engineered to meet the demanding requirements of modern power conversion systems, offering a perfect balance between efficiency, reliability, and ease of use. With a substantial 500V breakdown voltage rating, this MOSFET is ideal for high-voltage applications such as switched-mode power supplies (SMPS), power factor correction (PFC) stages, and lighting ballasts. The IPD50R380CE is housed in a TO-252 package, also known as DPAK, which is a surface-mount solution designed for high-density power electronics where space is limited but thermal performance is critical. This component represents Infineon's commitment to energy efficiency, helping designers reduce power losses and improve the overall thermal management of their end products. By integrating this MOSFET into your design, you are leveraging industry-leading semiconductor technology to achieve superior power density and performance.

Technically, the IPD50R380CE stands out with its low on-state resistance (RDS(on)) of just 0.38 ohms, which significantly minimizes conduction losses during operation. It is capable of handling a continuous drain current of up to 14.1A, making it suitable for medium to high power applications. One of the key advantages of the CoolMOS CE series is its low gate charge, which allows for faster switching speeds and reduced switching losses. This is particularly beneficial in high-frequency power converters where switching efficiency is the primary driver of overall system performance. The device also features a high peak current capability and robust avalanche characteristics, providing an extra layer of protection against voltage transients and inductive load spikes. These technical specifications ensure that the IPD50R380CE can operate reliably under the stressful conditions often found in industrial and consumer power electronics, providing a stable and efficient platform for energy conversion.

The application range for the IPD50R380CE is extensive, covering everything from PC power supplies and server power systems to LED drivers and adapter designs. In SMPS applications, the low RDS(on) and fast switching capabilities contribute to higher efficiency ratings, helping manufacturers meet strict energy standards like 80 PLUS. For lighting applications, the 500V rating provides the necessary headroom for driving high-voltage LED strings or operating in electronic ballasts for fluorescent lamps. The DPAK package is optimized for automated assembly processes, reducing manufacturing costs while ensuring high-quality solder joints and reliable mechanical attachment to the PCB. Furthermore, the IPD50R380CE is an excellent choice for consumer electronics where slim form factors are required, as the low-profile TO-252 package allows for thinner enclosures without sacrificing power handling capabilities. Its versatility makes it a go-to component for power engineers looking for a reliable and efficient N-channel MOSFET.

Thermal management is a critical consideration in power electronics, and the IPD50R380CE is designed to excel in this area. The TO-252 package features a large metal tab that serves as a primary heat dissipation path to the PCB's copper layers. When properly mounted with an appropriate thermal pad or via array, the device can effectively transfer heat away from the silicon junction, preventing thermal throttling and ensuring long-term reliability. Infineon has also optimized the internal structure of the MOSFET to provide a low thermal resistance from junction to case. This allows the device to operate at higher power levels while maintaining a lower junction temperature compared to standard MOSFET technologies. By reducing the heat generated during operation, the IPD50R380CE helps extend the lifespan of surrounding components, such as electrolytic capacitors, which are often sensitive to high ambient temperatures within power supply units.

Reliability and quality are hallmarks of the Infineon brand, and the IPD50R380CE is no exception. This MOSFET is manufactured using advanced silicon processes that ensure tight parameter control and consistent performance across all production lots. It is fully qualified for industrial applications and meets stringent environmental standards, including being lead-free and RoHS compliant. The device's robust design includes an integrated ESD protection diode for the gate, reducing the risk of damage during handling and assembly. Designers can also benefit from the extensive ecosystem of design tools provided by Infineon, including simulation models and evaluation boards, which accelerate the development cycle and reduce time-to-market. Choosing the IPD50R380CE means choosing a component that has been rigorously tested and proven in millions of power systems worldwide, providing you with the confidence that your design will stand up to the rigors of real-world use.

In conclusion, the Infineon IPD50R380CE N-Channel Power MOSFET is a premium semiconductor solution for anyone looking to optimize their power conversion designs. Its combination of high voltage capability, low on-resistance, and excellent thermal performance makes it a versatile and reliable choice for a wide array of applications. Whether you are developing the next generation of server power supplies or a highly efficient LED driver, this CoolMOS CE device provides the technical edge you need to succeed. By reducing energy waste and improving system reliability, the IPD50R380CE helps you create more sustainable and high-performance electronic products. We offer genuine Infineon components to ensure that your projects benefit from the highest quality standards in the industry. Don't settle for less when it comes to power management; upgrade your designs with the IPD50R380CE and experience the benefits of world-class MOSFET technology. Order now to secure this essential component for your high-efficiency power projects and take your electronic engineering to the next level.