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IPD50R380CEATMA1 MOSFET N CH 500V 9.9A PG-TO252

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IPD50R380CEATMA1

IPD50R380CEAUMA1 Power MOSFET, N Channel, 500 V, 14.1 A, 0.35 ohm, TO-252 (DPAK), Surface Mount

£4.55

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The IPD50R380CE is a high-performance N-channel power MOSFET from the renowned CoolMOS CE series, specifically designed to meet the high-efficiency requirements of modern power conversion systems. With a substantial 500V drain-source breakdown voltage, this device is engineered to handle the high-voltage stresses found in switch-mode power supplies, lighting ballasts, and power adapters. The CoolMOS technology represents a significant leap forward in semiconductor design, utilizing a superjunction principle that drastically reduces on-state resistance while maintaining a compact footprint. This results in significantly lower conduction losses compared to standard MOSFET technologies, making the IPD50R380CE an ideal choice for energy-sensitive applications. By integrating this component into your power stage, you can achieve higher power density and improved thermal performance, allowing for smaller and more efficient end products. It is the perfect solution for engineers who refuse to compromise on efficiency or reliability in their high-voltage circuit designs.

Packaged in the industry-standard PG-TO252 (DPAK), the IPD50R380CE is optimized for surface-mount assembly, providing a robust and thermally efficient housing for the silicon die. The DPAK package is widely recognized for its excellent thermal dissipation capabilities, which are crucial when managing the heat generated during high-frequency switching operations. This MOSFET's design allows for a low profile on the printed circuit board, which is essential for slim consumer electronics like ultra-thin adapters and LED drivers. The combination of high voltage capability and a compact surface-mount package makes it a versatile tool for designers looking to shrink the size of their power modules without sacrificing performance. Furthermore, the TO-252 package is compatible with automated pick-and-place machinery, ensuring high-speed manufacturing and consistent assembly quality. When you choose the IPD50R380CE, you are selecting a component that is as easy to manufacture as it is powerful in operation, providing a streamlined path from prototype to mass production.

Performance efficiency is the hallmark of the IPD50R380CE, particularly in its low gate charge and output capacitance. These characteristics are vital for high-speed switching applications, as they minimize the energy required to turn the MOSFET on and off, thereby reducing switching losses. In high-frequency power converters, these savings can lead to a significant increase in overall system efficiency and a reduction in the size of passive components like inductors and capacitors. The IPD50R380CE also features a very low Rds(on), which ensures that power dissipation is kept to an absolute minimum during the conduction phase. This makes the device exceptionally cool-running, which in turn enhances the reliability and lifespan of the entire electronic assembly. Whether you are designing a high-efficiency server power supply or a consumer-grade battery charger, the optimized switching behavior of this CoolMOS device ensures that your product meets the most stringent energy efficiency standards and regulatory requirements.

The IPD50R380CE is also designed with robustness in mind, featuring an integrated gate resistor that helps to dampen oscillations and improve electromagnetic interference (EMI) performance. This is a critical consideration in modern electronics, where minimizing noise is essential for maintaining signal integrity and passing regulatory compliance tests. The device's high avalanche ruggedness ensures that it can withstand the energy of inductive kickbacks and voltage transients, providing an extra layer of safety for your circuit. This makes it particularly suitable for industrial applications where the power grid may be unstable or where inductive loads are frequently switched. The stability of its electrical parameters across a wide temperature range further enhances its appeal for professional-grade power systems. By choosing a MOSFET that is built to endure, you reduce the risk of field failures and warranty claims, ultimately protecting your brand's reputation for quality and durability in a competitive global marketplace.

In the rapidly evolving landscape of green technology, the IPD50R380CE plays a pivotal role in enabling more sustainable electronic solutions. Its high efficiency directly contributes to a reduction in carbon footprints by wasting less energy as heat. This is especially important in applications like LED lighting and solar micro-inverters, where maximizing every watt is the primary goal. The CoolMOS CE series is specifically tailored for cost-sensitive applications that still require high performance, providing an excellent price-to-performance ratio. This allows manufacturers to produce high-end, energy-efficient products at a price point that is accessible to a broader market. By adopting the IPD50R380CE, you are not only improving your product's technical specifications but also aligning your designs with the global shift towards energy conservation and environmental responsibility. It is a smart, forward-thinking choice for any modern electronics project that aims to balance performance, cost, and ecological impact.

In conclusion, the IPD50R380CE N-Channel CoolMOS MOSFET is a top-tier semiconductor component that brings unparalleled efficiency and reliability to high-voltage power designs. Its 500V rating, low on-resistance, and excellent thermal management through the PG-TO252 package make it a standout choice for a wide range of power conversion tasks. Whether you are working on industrial power systems, consumer electronics, or innovative lighting solutions, this MOSFET provides the performance needed to excel. Its ease of integration and robust design ensure that your projects are not only efficient but also durable and easy to manufacture. Don't let power losses and thermal issues hold your designs back. Upgrade to the IPD50R380CE and see the difference that advanced CoolMOS technology can make in your hardware. Purchase now to secure this high-efficiency component for your next production run and lead the way in power management innovation. Your journey toward superior energy efficiency starts with the right components; choose the IPD50R380CE today.

More Information
Product Name IPD50R380CEATMA1 MOSFET N CH 500V 9.9A PG-TO252
SKU IPD50R380CEATMA1
Price £4.55
IPD50R380CEATMA1 MOSFET N CH 500V 9.9A PG-TO252 ColorAs per image
Category FET
BrandNikko Electronics ltd
Product CodeIPD50R380CEATMA1
AvailabilityYes
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IPD50R380CEATMA1 MOSFET N CH 500V 9.9A PG-TO252

£4.55