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IPP114N12N3GXKSA1 Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3

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IPP114N12N3GXKSA1

Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3

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The IPP114N12N3GXKSA1 is a high-performance N-channel MOSFET transistor designed for a wide array of power switching applications. This unipolar transistor boasts a voltage rating of 120V and a continuous drain current of 75A, making it suitable for demanding tasks in power supplies, motor control, and DC-DC converters. With a power dissipation rating of 136W and housed in a PG-TO220-3 package, it offers excellent thermal performance and ease of mounting, ensuring reliable operation even in high-temperature environments. Its robust design and optimized parameters contribute to efficient power conversion and minimal energy loss, making it a preferred choice for engineers seeking both performance and reliability.

This N-channel MOSFET features a low on-resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency. The fast switching speed of the IPP114N12N3GXKSA1 further enhances its performance in high-frequency applications, reducing switching losses and enabling more compact designs. The device is also designed with avalanche ruggedness, providing added protection against voltage transients and ensuring long-term reliability. Its gate charge is optimized to reduce drive power requirements, simplifying the design of gate drive circuits and further improving efficiency.

The IPP114N12N3GXKSA1 is ideal for use in synchronous rectification, where its low RDS(on) significantly reduces power dissipation compared to traditional diode-based rectifiers. It is also well-suited for use in battery management systems, where efficient power switching is crucial for maximizing battery life. Other applications include uninterruptible power supplies (UPS), solar inverters, and electric vehicle (EV) chargers. Its versatility and robust performance make it a valuable component in any power electronics design.

With its combination of high voltage and current ratings, low on-resistance, and fast switching speed, the IPP114N12N3GXKSA1 offers exceptional performance in a compact and easy-to-use package. Its robust design ensures reliable operation in demanding environments, making it a preferred choice for engineers seeking a high-performance N-channel MOSFET. Whether you're designing a power supply, motor control system, or DC-DC converter, the IPP114N12N3GXKSA1 provides the performance and reliability you need. Upgrade your power electronics design today with the IPP114N12N3GXKSA1 and experience the difference in efficiency and performance.

More Information
Product Name IPP114N12N3GXKSA1 Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
SKU IPP114N12N3GXKSA1
Price £9.00
IPP114N12N3GXKSA1 Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 Condition NEW
IPP114N12N3GXKSA1 Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 ColorAs per image
Category FET
BrandNikko Electronics ltd
Product CodeIPP114N12N3GXKSA1
AvailabilityYes
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IPP114N12N3GXKSA1 Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3

£9.00